Annotation: The course aims on novel and advanced sources of plasma, advanced plasma diagnostics and usage of discharges in technological applications. Students will deepen and expand their knowledge of advanced methods of low-temperature plasma excitation and learn about new directions and techniques of plasma diagnostics, which were primarily developed to characterize technological plasma during the deposition of thin films. The content of the course will focus on the introduction of modern and newly developed plasma sources, which are used in the developing semiconductor industry, in the modification of surfaces or the preparation of nanostructures. The second part of the course will deal with the theoretical description and practical application of unconventional diagnostic methods of low-temperature plasma and their application in the optimization of technological processes using low-temperature discharges. 1. Basics of the theory of high frequency technics. Theoretical description of electrical circuits at high frequencies. Theory of long lines. Skin effect. Waveguides and resonators. 2. High frequency capacitive plasma sources. Methods of tuning ion velocity distribution, plasma density and ion flux. Applications for ion etching. 3. Inductive plasma sources. Theoretical description of planar and cylindrical spiral plasma sources. Electrostatic shielding methods to suppress unwanted capacitive coupling. 4. Applications in the semiconductor industry. Microwave surfatron. Plasma source using surface electromagnetic wave to generate plasma in a wide range of excitation frequencies and operating pressures. Theoretical description of surface wave propagation and practical application of plasma source. 5. ECR and ECWR plasma sources. Plasma sources working with microwave or RF electromagnetic wave that propagates through plasma in the presence of a stationary magnetic field. Description of the effect of electromagnetic wave resonance with free electron cyclotron frequency. Use of plasma sources as sources of ion beams. 6. Helicon. High-frequency plasma source with high efficiency of transformation of RF energy into gas ionization using Landau damping to transfer electromagnetic energy into acceleration of electrons. Theoretical description and examples of plasma source construction. 7. Application of low-temperature unconventional plasma sources for Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALEt). Application of plasma in modern CVD method of preparation of high-quality semiconductor layers showing high conformality. 8. MinimalFab. Description of a new and rapidly developing concept of cheap production of complete semiconductor products in small series using autonomous stand-alone devices utilizing low-temperature plasma. 9. Microwave plasma diagnostics. 'Hairpin' probe method. 10. Ion probes. Methods of measuring ion velocity distribution. Probe with retarding field. 'Katsumata 'probe and its modifications. 11. Measurement of ion flux and basic plasma parameters using sophisticated analysis of RF signal applied to the substrate. 12. Measurement of the total energy flux on the substrate and measurement of the deposition rate and the influence of ionized particles on the deposition rate. The 'ion meter' probe and its applications.
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